Charge states distribution of 3350 keV He ions channeled in silicon

When an ion beam is aligned along a major crystalline axis the dominant interaction is with valence electrons. In this condition the charge exchange processes mostly concern the interaction between the incident ion and a quasi-free electron gas and a strong reduction of the charge-changing probabili...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2002-06, Vol.193 (1), p.113-117
Main Authors: Bentini, G.G, Albertazzi, E, Bianconi, M, Lotti, R, Lulli, G
Format: Article
Language:English
Subjects:
Capture and loss cross sections
Charge state
Ion–matter interaction
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Summary:When an ion beam is aligned along a major crystalline axis the dominant interaction is with valence electrons. In this condition the charge exchange processes mostly concern the interaction between the incident ion and a quasi-free electron gas and a strong reduction of the charge-changing probabilities is expected. In this work, 3350 keV He + and He 2+ ions were aligned at small tilt angles about the 〈1 1 0〉 axis of a 4650 Å silicon crystalline membrane. The charge state distribution (CSD) of the transmitted ions was detected by an electro-magnetic analyzer having a very small acceptance angle. In these conditions the equilibration of the CSD was not yet reached and this allowed, making use of simple approximations, for the measurement of the valence electron loss cross-section.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(02)00736-X