Study of ion beam mixing in C/Si multilayers by X-ray absorption spectroscopy

The C/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. These were characterized by X-ray diffraction before and after high-energy heavy ion, 120 MeV Au, irradiation. Soft X-ray absorption spectra in the C K-edge region were measured using synchrotr...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2002-06, Vol.193 (1), p.324-328
Main Authors: Asokan, K, Srivastava, S.K, Kabiraj, D, Mookerjee, S, Avasthi, D.K, Jan, J.C, Chiou, J.W, Pong, W.F, Ting, L.C, Chien, F.Z
Format: Article
Language:English
Subjects:
Ion beam mixing
Multilayers
Silicon carbide
XANES
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Summary:The C/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. These were characterized by X-ray diffraction before and after high-energy heavy ion, 120 MeV Au, irradiation. Soft X-ray absorption spectra in the C K-edge region were measured using synchrotron radiation to identify the chemical bonding states of the Si and C. This study indicates that ion beam mixing induces SiC phase and carbon clusters. A significant increase in the intensity of pre-edge peak of C K-edge, assigned to π ∗ , is observed in the irradiated C/Si multilayer sample. It is intriguing to note such sharp increase in intensity after irradiation that may be associated with the effect of large electronic excitation energy transferred by energetic Au ions.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(02)00799-1