Mixing in Au/Si system by nuclear energy loss

In the present work, we report the formation of silicide phases in the Au/Si system by ion beam mixing at room temperature. The samples (58 nm Au on Si) were irradiated by 1 MeV Xe ions. The ion energy was chosen in such a way that it deposits maximum energy at the interface. The Rutherford backscat...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2003-12, Vol.212, p.238-241
Main Authors: Kumar, Sarvesh, Sahoo, P.K., Chauhan, R.S., Kabiraj, D., Tiwari, Umesh, Varma, D., Avasthi, D.K.
Format: Article
Language:English
Subjects:
Ion beam mixing
Phase formation
Surface morphology
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Summary:In the present work, we report the formation of silicide phases in the Au/Si system by ion beam mixing at room temperature. The samples (58 nm Au on Si) were irradiated by 1 MeV Xe ions. The ion energy was chosen in such a way that it deposits maximum energy at the interface. The Rutherford backscattering spectrometry measurements were done on the pristine and irradiated samples to determine the composition of mixed region. Grazing incidence X-ray diffraction measurements were performed which showed the formation of silicide phase (Au 2Si, Au 3Si, Au 5Si and Au 5Si 2). Scanning electron microscopy measurements indicated the micron size crystallites in the irradiated samples.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(03)01738-5