Microstructural characterization of amorphized and recrystallized 6H-SiC

The mode of recrystallization of 6H-SiC implanted at 200 keV with a dose of 1 × 10 15 Ge + cm −2 and subsequently annealed at 1500°C for 10 min, was studied by combined cross-section and planar view transmission electron microscopy techniques. The type of defects developed during recrystallization a...

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Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996-12, Vol.120 (1), p.181-185
Main Authors: Pacaud, Y., Skorupa, W., Stoemenos, J.
Format: Article
Language:English
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Summary:The mode of recrystallization of 6H-SiC implanted at 200 keV with a dose of 1 × 10 15 Ge + cm −2 and subsequently annealed at 1500°C for 10 min, was studied by combined cross-section and planar view transmission electron microscopy techniques. The type of defects developed during recrystallization and their role in the 6H to 3C (cubic) transformation of the recrystallized zone is discussed. The instability of the 6H-SiC polytype and the domination of the 3C-SiC is attributed to the inability to apply the step-controlled growth mechanism, which is essential for the growth of 6H-SiC, in the amorphous zone.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(96)00505-8