Stopping powers of GaAs for 0.3–2.5 MeV 1H and 4He ions

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996-12, Vol.119 (4), p.457-462
• Main Authors: Rajatora, M., Väkeväinen, K., Ahlgren, T., Rauhala, E., Räisänen, J., Rakennus, K.
• Format: Article
• Language: English
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/S0168-583X(96)00629-5

Ion backscattering and foil transmission methods have been used to determine the energy loss of 0.3–2.5 MeV 1H and 4He ions in crystalline bulk GaAs and thin foil GaAs grown by molecular beam epitaxy (MBE). The self-supporting GaAs sample foil was produced by floating the MBE-grown GaAs film from an AlAs GaAs backing by a lift-off process. The stopping powers, corresponding to energy loss of the ions in a nonchanneling direction in the crystal were extracted from the measurements. Ion backscattering and channeling were employed to study the effect of the crystal structure of the thin foil sample on the stopping powers deduced. Deviations from semi-empirical SRIM calculations (version 96.04) were observed in the case of 4He ions for which the stopping powers fall clearly below the calculated values. An average deviation of about 5% is found for the energies studied, from below the stopping power maximum at 0.8 to 2.2 MeV. The results obtained by the two independent experimental methods have been compared and discussed.