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Ion-beam assisted deposition of thin molybdenum films studied by molecular dynamics simulation
We report results obtained by molecular dynamics simulation of low energy argon-ion assisted growth of thin molybdenum films (≈ 20 Å). The effects of a single ion impact are discussed, but more particularly we consider film growth from a manufacturing viewpoint and examine the properties of the comp...
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Published in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1997-05, Vol.127, p.273-277 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report results obtained by molecular dynamics simulation of low energy argon-ion assisted growth of thin molybdenum films (≈ 20 Å). The effects of a single ion impact are discussed, but more particularly we consider film growth from a manufacturing viewpoint and examine the properties of the completed films. Results for ion-beam assisted deposition are compared with those for unassisted growth (i.e. physical vapor deposition). Surface orientation, atomic displacements, surface roughness, sputtering, point defects, and the influence of off-normal atom incidence are discussed. |
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ISSN: | 0168-583X 1872-9584 |
DOI: | 10.1016/S0168-583X(96)00939-1 |