Ion bombardment induced compositional changes in GaP and InP surfaces

This paper describes an experimental study of the effects of low energy ion bombardment on GaP (1 1 1) and InP (1 0 0) single crystal surfaces using X-ray photoelectron spectroscopy (XPS) combined with low energy ion scattering spectroscopy (LEISS). XPS analysis showed that within the sampling depth...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1998-02, Vol.135 (1), p.250-255
Main Authors: Yu, W., Sullivan, J.L., Saied, S.O., Jones, G.A.C.
Format: Article
Language:English
Subjects:
Diffusion
GAP
INP
Ion scattering spectroscopy
Sputtering
Surface segregation
X-ray photoelectron spectroscopy
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Summary:This paper describes an experimental study of the effects of low energy ion bombardment on GaP (1 1 1) and InP (1 0 0) single crystal surfaces using X-ray photoelectron spectroscopy (XPS) combined with low energy ion scattering spectroscopy (LEISS). XPS analysis showed that within the sampling depth of less than 100 Å the atomic ratios of P:Ga and P:In in the bombarded GaP and InP surfaces are 0.71:1 and 0.6:1, respectively. LEISS results indicated that the atomic ratios at the first atomic layer were 0.9:1 at GaP surface and 0.81:1 at InP surface. Combining XPS and LEISS results, it is clear that ion bombardment changes the surface compositional distribution in GaP and InP semiconductor surfaces. These changes are discussed in terms of the current theoretical models, such as non-stoichiometric sputtering theory, models derived from bombardment induced Gibbsian equilibrium surface segregation and bombardment enhanced diffusion.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(97)00599-5