Heteroepitaxial growth of GaAs on Si substrates using low energy Ga and As ion beams

GaAs thin films were heteroepitaxially grown on (1 0 0) and (1 1 1) Si substrates at a temperature of 500°C using Ga and As ion beams at energies lower than about 50 eV. The growth rates increased with decreasing ion energy. However, the GaAs films were heteroepitaxially grown on the (1 0 0) and (1...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1998-05, Vol.141 (1), p.562-565
Main Authors: Yokota, K, Tamura, S, Miyashita, F
Format: Article
Language:English
Subjects:
Gallium arsenide
Heteroepitaxial growth
Ion beams
Sticking coefficients
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Summary:GaAs thin films were heteroepitaxially grown on (1 0 0) and (1 1 1) Si substrates at a temperature of 500°C using Ga and As ion beams at energies lower than about 50 eV. The growth rates increased with decreasing ion energy. However, the GaAs films were heteroepitaxially grown on the (1 0 0) and (1 1 1) Si substrates by mixed beams containing larger amounts of the neutral Ga and As molecular beams added to the ion beams even when the ion beams were accelerated to energies higher than 60 eV.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(98)00165-7