Development of a periodically structured monocrystalline target of Si for X-ray emission

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1998-10, Vol.145 (1), p.236-238
• Main Authors: Nakayama, K., Sekimura, M., Yanase, I., Endo, I., Takashima, Y., Kaplin, V., Potylitsin, A.
• Format: Article
• Language: English
• Subjects: Parametric X-rays; Si monocrystalline target; Transition radiation; X-ray source
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/S0168-583X(98)00259-6

We have developed a Si monocrystalline target for producing X-rays by a relativistic electron beam. A grating structure was formed on a Si substrate by silicon micromachining technology with adequate accuracy. The targets were designed to produce 33 keV RTR X-rays from 900 MeV electrons. The width of the grating structure is the same as the thickness of the Si multi-foil targets, made for INS experiments as well as Tomsk experiments, already reported at RREPS95. All of these Si single crystal targets can be tilted at the Bragg angle condition of 33 keV RTR X-rays, to simultaneously produce 33 keV Parametric X Radiation. We can observe both of diffracted RTR and Parametric X Radiation. These results encourage us to study a new type of X-ray source based on a Si monocrystalline target using micromachining technology.