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Resonant generation of terahertz optical sidebands from confined magnetoexcitons

We have probed the internal structure and nonlinear response of magnetoexcitons in GaAs/AlGaAs quantum wells by resonantly driving one- and two-photon internal transitions with intense terahertz electric fields. Strong near-bandgap emission lines, or optical sidebands, appear at frequencies ω NIR ±...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1998-09, Vol.144 (1), p.115-122
Main Authors: Kono, J., Su, M.Y., Černe, J., Sherwin, M.S., Allen Jr, S.J., Inoshita, T., Noda, T., Sakaki, H.
Format: Article
Language:English
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Summary:We have probed the internal structure and nonlinear response of magnetoexcitons in GaAs/AlGaAs quantum wells by resonantly driving one- and two-photon internal transitions with intense terahertz electric fields. Strong near-bandgap emission lines, or optical sidebands, appear at frequencies ω NIR ± 2 nω THz, where ω NIR is the interband exciton-creation frequency, ω THz is the frequency of the driving field, and n is an integer. The intensity of the sidebands exhibits pronounced enhancement when ω THz coincides with transitions between magnetically tuned energy levels in the excitons, providing new and accurate information on the internal dynamics of excitons.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(98)00301-2