Amorphization of Si(0 0 1) by ultra low energy (0.5–5 keV) ion implantation observed with high-resolution RBS

The process of amorphization of Si(0 0 1) by ultra low energy (0.5 keV B + and 5 keV Si +) ion implantation is investigated using high-resolution RBS/channeling with a depth resolution better than 1 nm. In contrast to observations at higher implantation energies, amorphization by the ultra low energ...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1999, Vol.148 (1), p.284-288
Main Authors: Kimura, K, Agarwal, A, Toyofuku, H, Nakajima, K, Gossmann, H.-J
Format: Article
Language:English
Subjects:
Amorphization
High-resolution
Ion-implantation
RBS
Ultra-low-energy
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Summary:The process of amorphization of Si(0 0 1) by ultra low energy (0.5 keV B + and 5 keV Si +) ion implantation is investigated using high-resolution RBS/channeling with a depth resolution better than 1 nm. In contrast to observations at higher implantation energies, amorphization by the ultra low energy ion implantation appears to proceed from the SiO 2/c-Si interface. The threshold dose for amorphization is determined to be ∼1 × 10 15 cm −2 for 0.5 keV B + and ∼1.5 × 10 14 cm −2 for 5 keV Si +. Comparison of the experimental results with TRIM simulations suggests that the SiO 2/c-Si interface behaves as a nucleation site for amorphization.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(98)00696-X