Residual stresses and ion implantation effects in Cr thin films

The evolution of intrinsic residual stresses in sputtered Cr thin films with substrate bias and post-deposition ion irradiation is investigated. The relaxation of tensile stresses and build up of compressive stresses with increasing ion irradiation dose is studied using ions of different masses and...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1999, Vol.148 (1), p.211-215
Main Authors: Misra, A, Fayeulle, S, Kung, H, Mitchell, T.E, Nastasi, M
Format: Article
Language:English
Subjects:
Cr thin films
Ion irradiation
Residual stress
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Summary:The evolution of intrinsic residual stresses in sputtered Cr thin films with substrate bias and post-deposition ion irradiation is investigated. The relaxation of tensile stresses and build up of compressive stresses with increasing ion irradiation dose is studied using ions of different masses and energies such as 110 keV Ar, 33 keV C and 330 keV Xe. The stress evolution is related to the corresponding microstructural changes in the films. The changes in the residual stress during ion irradiation are explained by considering the manner in which the interatomic distances and forces change during irradiation, and the generation of defects during irradiation.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(98)00780-0