Dependence of transmission and scattering of ultrarelativistic electrons in thin single-crystal target on the crystallographic axis orientation

The results of an experiment on 1200 MeV electrons passing through a thin (10 μm) Si monocrystal cut along the (111) plane of a crystal are presented. The angular distributions of the scattered electrons and the orientation dependencies of electron transmission and scattering to small solid angle in...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2000-04, Vol.164-165, p.97-102
Main Authors: Blazhevich, S.V., Bochek, G.L., Kulibaba, V.I., Maslov, N.I., Nasonov, N.N., Shramenko, B.I., Truten', V.I.
Format: Article
Language:English
Subjects:
Monocrystal
Orientation dependence
Scattering
Ultrarelativistic electron
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Summary:The results of an experiment on 1200 MeV electrons passing through a thin (10 μm) Si monocrystal cut along the (111) plane of a crystal are presented. The angular distributions of the scattered electrons and the orientation dependencies of electron transmission and scattering to small solid angle in the defined direction are measured. The theoretical calculation of electron transmission is carried out taking into account the azimuthal scattering only, and taking into account also the polar angle scattering. It is shown that taking into account polar angle scattering, which is connected with the initial distribution of impact parameters, leads to a significant reduction of the discrepancy between the results of calculation and the experimental data.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(99)01135-0