Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2000-05, Vol.166-167, p.572-576
• Main Authors: Umirzakov, B.E., Pugacheva, T.S., Tashatov, A.T., Tashmukhamedova, D.A.
• Format: Article
• Language: English
• Subjects: CaF2 film; Electronic structure; Ion-implantation; Photoelectron spectroscopy; Thin film
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/S0168-583X(99)01151-9

Monocrystalline CaF2 films are very perspective materials for the creation of 3D integral schemes with semiconductor-dielectric-semiconductor (SDS) and metal-dielectric-semiconductor (MDS) structures, optoelectronic devices, optical resonators or storage devices. However, the use of such films needs the controlled change of the electronic structure, the crystalline lattice parameter and other properties of the surface layers. Our investigations have shown that low energy Ba+ ion-implantation combined with annealing can be used for this purpose. The concentration profiles of Ba impurity atoms in ion-implanted CaF2 films were determined. Information about the density distribution of electronic states and about the parameters of the energy bands of the ion-implanted CaF2 films were obtained by the technique of ultraviolet photoelectron spectroscopy. The results can be used for the production of optical resonators in the UV region with variable frequency (7.8eV⩽hν⩽9.2eV).