An introduction to deep submicron CMOS for vertex applications

Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2001-11, Vol.473 (1), p.140-145
Main Authors: Campbell, M, Anelli, G, Cantatore, E, Faccio, F, Heijne, E.H.M, Jarron, P, Santiard, J.-C, Snoeys, W, Wyllie, K
Format: Article
Language:English
Subjects:
CMOS
Readout electronics
Vertex detectors
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Summary:Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed.
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(01)01135-4