High-resolution photoinduced transient spectroscopy of neutron irradiated bulk silicon

High-resolution photoinduced transient spectroscopy has been employed in a study on the formation of defects in bulk silicon due to 1 MeV neutron irradiation. Apart from divacancies in various charge states, complexes involving interstitial carbon and oxygen were revealed. The defect structure of fl...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2002-01, Vol.476 (3), p.639-644
Main Authors: Kozłowski, R, Kamiński, P, Nossarzewska-Orłowska, E
Format: Article
Language:English
Subjects:
Defect levels
Irradiation defects
Neutron irradiation
PITS
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Summary:High-resolution photoinduced transient spectroscopy has been employed in a study on the formation of defects in bulk silicon due to 1 MeV neutron irradiation. Apart from divacancies in various charge states, complexes involving interstitial carbon and oxygen were revealed. The defect structure of float zone and Czochralski-grown material exposed to fluences of 2×10 14 and 6.75×10 14 cm −2 is compared.
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(01)01652-7