GaAs as a material for particle detectors

Among the possible semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to its high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of d...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2002-11, Vol.494 (1), p.120-127
Main Authors: Ayzenshtat, A.I., Budnitsky, D.L., Koretskaya, O.B., Okaevich, L.S., Novikov, V.A., Potapov, A.I., Tolbanov, O.P., Tyazhev, A.V., Vorobiev, A.P.
Format: Article
Language:English
Subjects:
Charge collection efficiency
Microstrip detectors
Radiation hardness
Si-GaAs
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Summary:Among the possible semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to its high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of different technological methods is given in this work. The main parameters of detector structures and multi-element detectors on the base of SI-GaAs are presented.
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(02)01455-9