Charge collection in X-ray pixel detectors based on SI-GaAs doped with Cr

An analysis of the performance of X-ray pixel detectors based on SI-GaAs doped with Cr has been carried out. An analytic form for electron and hole currents of a pixel has been obtained. The detector based on our material has high charge-collection efficiency only when the pixel contacts are anodes...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2003-08, Vol.509 (1-3), p.52-55
Main Authors: Ayzenshtat, G.I., Bimatov, M.V., Tolbanov, O.P., Vorobiev, A.P.
Format: Article
Language:English
Subjects:
Charge collection
Pixel detectors
Radiation detectors
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Summary:An analysis of the performance of X-ray pixel detectors based on SI-GaAs doped with Cr has been carried out. An analytic form for electron and hole currents of a pixel has been obtained. The detector based on our material has high charge-collection efficiency only when the pixel contacts are anodes in contrast to LEC SI-GaAs. The mean charge collected on pixel contact is calculated for radiation energies of 30 and 60keV (charge is averaged over all monoenergetic photons irradiating the detector cell).
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(03)01548-1