Production of solid deuterium targets by ion implantation

Solid metal, semiconductor and metallic glass samples were irradiated with deuteron atomic ions between 60 and 180 keV incident energies. Accumulation rates of deuterons in different targets were recorded by the detection of protons and neutrons via the 2H(d, p) and 2H(d, n) reactions. A simple anal...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 1997-09, Vol.397 (1), p.75-80
Main Authors: Csikai, J, Szegedi, S, Oláh, L, Ibrahim, S.M, El-Megrab, A.M, Molla, N.I, Rahman, M.M, Miah, R.U, Habbani, F, Shaddad, I
Format: Article
Language:English
Subjects:
Accumulation kinetics
Charged particle reactions
Concentration profile
Ion implantation
Neutron spectrometry
Solid deuterium targets
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Summary:Solid metal, semiconductor and metallic glass samples were irradiated with deuteron atomic ions between 60 and 180 keV incident energies. Accumulation rates of deuterons in different targets were recorded by the detection of protons and neutrons via the 2H(d, p) and 2H(d, n) reactions. A simple analytical expression is given to describe the kinetics of the accumulation. The dependence of the reaction rate on the deuteron energy gives information on the concentration profile in addition to the neutron flux density spectra. A varying distortion of the implanted deuteron profiles by a change in the beam energy were also observed for different targets.
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(97)00375-6