Carrier lifetime under low and high electric field conditions in semi-insulating GaAs

The mobility lifetime product of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector. The lifetime in high electric field (≥ 10 4V/cm) of electrons was investigated with Schottky diodes. Both results were analyze...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 1998-06, Vol.410 (1), p.74-78
Main Authors: Rogalla, M, Geppert, R, Göppert, R, Hornung, M, Ludwig, J, Schmid, Th, Irsigler, R, Runge, K, Söldner-Rembold, A
Format: Article
Language:English
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Summary:The mobility lifetime product of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector. The lifetime in high electric field (≥ 10 4V/cm) of electrons was investigated with Schottky diodes. Both results were analyzed as a function of substrate resistivity and trap concentrations. We identified the ionized arsenic antisite defect (EL2 +) as the dominant electron trap in the high field region and determined the capture cross-section as being (8.0 ± 0.6) × 10 −14 cm 2.
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(98)00140-5