Scanning of irradiated silicon detectors using alpha particles and low-energy protons

In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC’) and by monoenergetic protons with energies from 1.0 to 2.5 MeV. Their response characteristics ha...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 1999-09, Vol.434 (1), p.118-130
Main Authors: Casse, G, Doležal, Z, Glaser, M, Kohout, Z, Konı́ček, J, Lemeilleur, F, Leroy, C, Linhart, V, Mareš, J.J, Pospı́šil, S, Roy, P, Sopko, B, Šiňor, M, Švejda, J, Vorobel, V, Wilhelm, I
Format: Article
Language:English
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Summary:In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC’) and by monoenergetic protons with energies from 1.0 to 2.5 MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence.
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(99)00591-4