Large-hole anode-type fast atom beam (LA-FAB) source and its application to high-aspect-ratio GaAs etching

We developed a large-hole anode-type fast atom beam (LA-FAB) source and evaluated its discharge characteristics. To estimate the LA-FAB source performance, we measured the effect of the magnetic field intensity on the discharge current. The results showed that the LA-FAB source could produce high be...

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Bibliographic Details
Published in:Applied surface science 2001-01, Vol.169, p.603-606
Main Authors: Watanabe, Kenji, Hatakeyama, Masahiro, Ichiki, Katsunori, Satake, Tohru, Kato, Takao, Nagai, Kazutoshi
Format: Article
Language:English
Subjects:
Etching
FAB
Fiber communications
High-aspect-ratio
OEIC
RIBE
Semiconductor GaAs
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Summary:We developed a large-hole anode-type fast atom beam (LA-FAB) source and evaluated its discharge characteristics. To estimate the LA-FAB source performance, we measured the effect of the magnetic field intensity on the discharge current. The results showed that the LA-FAB source could produce high beam current at 1–2 kV discharge voltage in relatively weak magnetic field of 50 G as compared with ordinary-type-FAB sources, and we also achieved GaAs etching with aspect-ratios of about 9:1 by using CCl 4 and could fabricate cavity mirrors for GaAlAs ridge wave guide laser diodes by using Cl 2. For GaAs etching, it is feasible to produce aspect-ratios of about 9:1 with vertical etched walls and the fabricated cavity mirrors yield almost the same performance as cleaved mirrors. The FAB source will contribute to the continued improvement of optoelectric integrated circuits and fiber optical communications.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(00)00797-2