Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric

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Bibliographic Details
Published in:Applied surface science 2001-09, Vol.181 (3-4), p.179-184
Main Authors: PAL, Suparna, BOSE, D. N
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Electronics
Exact sciences and technology
Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
Miscellaneous
Physics
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(01)00196-9