Structure and luminescence of GaN layers

• Published in: Applied surface science 2001-07, Vol.179 (1), p.191-195
• Main Authors: Barfels, T, Fitting, H.-J, Jansons, J, Tale, I, Veispals, A, von Czarnowski, A, Wulff, H
• Format: Article
• Language: English
• Subjects: Cathodoluminescence; Cathodoluminescence, ionoluminescence; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal structure; Exact sciences and technology; GaN layers; Iii-v semiconductors; Luminescence decay time; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOCVD; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other luminescence and radiative recombination; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(01)00278-1

GaN films grown on 〈1 1 1〉 Si substrate by means of low pressure MOCVD technique in a horizontal flow quartz reactor are characterized by different thin layer analysis methods. The polycrystalline hexagonal structure of the GaN layers has been checked by means of grazing incidence X-ray diffractometry and IR spectroscopy. Cathodoluminescence (CL) spectra and their time kinetics are studied. The mean decay time of the 3.44 eV UV bound exciton transition is below 1 ns, whereas the 3.26 eV violet band shows a slow hyperbolical decay over about 1 μs. A third yellow band appears at 2.12 eV due to transitions via localized states.