Fabrication and characterization of Au/n-Si photodiode with lithium as back-surface-field

In this work, we present a design and characterization of Schottky barrier Au/n-Si/Li based UV–VIS photodiode for application, such as solar UV monitoring, flame sensors and UV astronomy. The Schottky photodiode was realized with a thin layer of gold (Au) at the front side of high purity n-type sili...

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Bibliographic Details
Published in:Applied surface science 2002-10, Vol.199 (1), p.22-30
Main Authors: Keffous, A, Zitouni, M, Belkacem, Y, Menari, H, Chergui, W
Format: Article
Language:English
Subjects:
Applied sciences
Back-surface-field
Electronics
Exact sciences and technology
Lithium
Optoelectronic devices
Photodiode
Quantum efficiency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
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Summary:In this work, we present a design and characterization of Schottky barrier Au/n-Si/Li based UV–VIS photodiode for application, such as solar UV monitoring, flame sensors and UV astronomy. The Schottky photodiode was realized with a thin layer of gold (Au) at the front side of high purity n-type silicon and lithium (Li) on the back side as back-surface-field (Li-BSF). The Li-BSF used was a new method which allow us to modulate and choice the depletion width. I– V characteristic, capacitance and spectral response were performed, the results were found in agreement with those determined by simulation method. A quantum efficiency (QE) of 47% at about 550 nm wavelength was obtained using only a thin gold layer as sensitive area. The thickness of gold used on the photodiode was around 125 Å, where 58% of light transmission was carried out.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(02)00162-9