The effects of the time-dependent and exposure time to air on Au/n-GaAs schottky barrier diodes

A study on Au/n-GaAs Schottky barrier diode (SBD) parameters with and without thin native oxide layer fabricated on n-type GaAs has been made. The native oxide layer with different thicknesses on chemically cleaned GaAs surface was obtained by exposing the GaAs surfaces to clean room air before meta...

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Bibliographic Details
Published in:Applied surface science 2002-05, Vol.191 (1-4), p.188-195
Main Authors: Özdemir, A.F, Kőkçe, A, Türüt, A
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Equilibrium barrier value
Exact sciences and technology
Exposure time
Schottky barrier diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A study on Au/n-GaAs Schottky barrier diode (SBD) parameters with and without thin native oxide layer fabricated on n-type GaAs has been made. The native oxide layer with different thicknesses on chemically cleaned GaAs surface was obtained by exposing the GaAs surfaces to clean room air before metal evaporation. The native oxide thicknesses of samples AuD2, AuD3, AuD4, AuD5, and AuD6 are in the form AuD2
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(02)00181-2