Growth and characterisation of InAs/InGaAs quantum dots like structure on GaAs/Si substrate by AP-MOCVD

• Published in: Applied surface science 2002-05, Vol.191 (1-4), p.196-204
• Main Authors: Thilakan, Periyasamy, Kazi, Zaman Iqbal, Egawa, Takashi
• Format: Article
• Language: English
• Subjects: AP-MOCVD; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; GaAs/Si; Growth; InAs; InGaAs; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Quantum dot; Scanning probe microscopy; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(02)00183-6

Atmospheric pressure-metal organic chemical vapour deposition (AP-MOCVD) was used to grow InAs and InGaAs quantum dots (QDs) on GaAs/Si substrate. The influence of growth temperature on the QD density and distribution was investigated. Scanning probe microscopy (AFM and DFM) was used to investigate the growth behaviour of the QD structure. The growth properties of InAs/InGaAs QDs on the highly stressed GaAs/Si substrate under S–K growth mode at different deposition temperatures have been analysed. It was identified that the growth temperature plays major role in determining the growth and distribution of both InAs and InGaAs QDs due to the temperature-dependent dislocation propagation from the GaAs/Si substrate. The growth of InGaAs QDs was found “In” composition dependent. A high QD density of ∼5×1010–6×1010cm−2 was obtained on GaAs/Si at a growth temperature of 500°C.