The growth of silver films on Si(1 1 1)-(7 × 7) studied by using photoelectron diffraction

We have combined synchrotron radiation photoemission (PES), X-ray photoelectron diffraction (PED) and low-energy electron diffraction (LEED) to examine the formation of the Ag/Si(111)-(7×7) interface, throughout a wide silver coverage range. All studied silver films gave rise to a fcc phase with the...

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Bibliographic Details
Published in:Applied surface science 2003-05, Vol.212-213, p.235-243
Main Authors: Pérez-Dieste, V, Sanchez, J.F, Izquierdo, M, Roca, L, Avila, J, Asensio, M.C
Format: Article
Language:English
Subjects:
68.35.Bs
73.20.At
79.60.-i
Metal–semiconductor interfaces
Photoelectron diffraction
Photoemission
Silicon
Silver
Spectroscopy
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Summary:We have combined synchrotron radiation photoemission (PES), X-ray photoelectron diffraction (PED) and low-energy electron diffraction (LEED) to examine the formation of the Ag/Si(111)-(7×7) interface, throughout a wide silver coverage range. All studied silver films gave rise to a fcc phase with their principal crystallographic axes parallel to the substrate and a [111] orientation perpendicular to the surface. Angular-scanned PED of the Ag 4p core level showed the formation of well-ordered Ag islands, with the presence of two well-defined domains, both for 6 and 30ML films. The two domains were rotated 60° from each other and appeared in a 60/40 proportion.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(03)00095-3