Optical and dielectric properties of highly oriented (Zr0.8,Sn0.2)TiO4 thin films prepared by rf magnetron sputtering

• Published in: Applied surface science 2003-05, Vol.214 (1-4), p.136-142
• Main Authors: Cheng, W.X., Ding, A.L., Qiu, P.S., He, X.Y., Zheng, X.S.H.
• Format: Article
• Language: English
• Subjects: (Zr0.2,Sn0.8)TiO4 (ZST) thin film; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Dielectric properties; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics; rf sputtering; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(03)00269-1

(Zr0.8,Sn0.2)TiO4 (ZST) thin films (∼150nm) were grown on Pt/Ti/SiO2/Si(100) and fused quartz glass substrates by radio frequency (rf) magnetron sputtering. The microstructure and the surface morphology of ZST thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The optical properties of ZST thin film were obtained by spectroscopic ellipsometry and UV-Vis spectrometry for the first time. The optical band gap was found to be 3.30eV of indirect-transition type. The low frequency (1kHz–1MHz) dielectric properties of ZST thin film were also discussed. The temperature coefficient of capacitance (TCC) of ZST thin film is about 80.2ppm/°C at 1MHz. The dielectric constant and dielectric loss at 100kHz are 36.6 and 0.0069, respectively. The large dielectric loss compared with that of ZST ceramic is caused by the structure disorder in the thin film.