Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

• Published in: Applied surface science 2003-12, Vol.220 (1), p.293-297
• Main Authors: Kim, J.C., Ji, J.-Y., Kline, J.S., Tucker, J.R., Shen, T.-C.
• Format: Article
• Language: English
• Subjects: Annealing; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Ion radiation effects; Ion sputtering; Materials science; Physical radiation effects, radiation damage; Physics; Scanning tunneling microscopy; Silicon; Solid surfaces and solid-solid interfaces; Structure of solids and liquids; crystallography; Surface cleaning, etching, patterning; Surface contamination; Surface morphology; Surface structure and topography; Surface treatments; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(03)00826-2

Si(1 0 0) surfaces were prepared by wet-chemical etching followed by 0.3–1.5 keV Ar ion sputtering, either at elevated or room temperature (RT). After a brief anneal under ultrahigh vacuum (UHV) conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(1 0 0) surface. However, subsequent 300 eV Ar ion sputtering at room temperature followed by a 700 °C anneal yields atomically clean and flat Si(1 0 0) surfaces suitable for nanoscale device fabrication.