Fabrication and properties of As-doped ZnO films grown on GaAs(0 0 1) substrates by radio frequency (rf) magnetron sputtering

• Published in: Applied surface science 2004-01, Vol.221 (1), p.32-37
• Main Authors: Lee, Woong, Hwang, Deuk-Kyu, Jeong, Min-Chang, Lee, Myeongkyu, Oh, Min-Seok, Choi, Won-Kook, Myoung, Jae-Min
• Format: Article
• Language: English
• Subjects: As doping; Chemical composition analysis, chemical depth and dopant profiling; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; GaAs; Materials science; Materials testing; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Photoluminescence; Physics; rf magnetron sputtering; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; ZnO
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(03)00947-4

ZnO thin films were grown on GaAs(0 0 1) substrate to study the feasibility of making As-doped textured ZnO films for possible optical device application using radio frequency (rf) magnetron sputtering. It was demonstrated that highly c-axis oriented ZnO crystal with uniformly doped As could be grown using this deposition technique. Crystallinity was shown to improve with higher processing temperature. Photoluminescence spectroscopy, supplemented by cathodo-luminescence imaging, showed that the ZnO films have good optical quality with strong near band emission peak at 3.3 eV and spatially homogeneous luminescence indicating possibility of producing As-doped ZnO films with good crystallinity and optical properties using the technique used herein.