A mini-ALE attachment to UHV surface analysis equipment

• Published in: Applied surface science 1996-11, Vol.107 (1-4), p.255-259
• Main Authors: van Welzenis, R.G, Bink, R.A.M, Brongersma, H.H
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Electron, ion spectrometers and related techniques; Exact sciences and technology; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(96)00496-5

An atomic layer epitaxy (ALE) module has been developed that can be attached to a port of UHV surface analysis equipment. In our case this would, for instance, enable analysis by low energy ion scattering (LEIS), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). This so-called mini-ALE will be used to study and optimize the growth mechanisms of mono-atomic and sub-monatomic metal layers and to prepare model samples for studies of catalysts and small metal clusters. The mini-ALE basically consists of a small (≈ 1 cm 3) growth chamber suspended in an UHV environment, with valved inlets for the reaction and purge gases. The sample can be transferred to the analysis chamber via a load-lock. The surface temperature of the sample can be controlled from room temperature to approximately 500°C. The system was tested by attaching it to one of our LEIS set-ups and growing CuO on Al 2O 3, using Cu(acac) 2 and artificial air as reactants. Cu growth was observed, covering about 3% of the surface. Results on growth as a function of surface temperature are given.