Single-layer halftone phase-shifting masks for DUV microlithography: optical property simulation and chromium compound film preparation

The investigation of single layer halftone phase shift mask (SLHTPSM) has been carried by both simulation and chromium fluoride film fabrication. Theoretical analysis provides the optimum SLHTPSM constructions for I-line (365 nm), KrF (248 nm) and ArF (193 nm) microlithographies. A fully characteriz...

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Bibliographic Details
Published in:Applied surface science 1997-04, Vol.113, p.680-684
Main Authors: Jiang, Zhong-Tao, Hong, Seungbum, Kim, Eunah, Bae, Byeong-Soo, Lim, Sungchul, Woo, Sang-Gyun, Koh, Young-Bum, No, Kwangsoo
Format: Article
Language:English
Subjects:
CrF film
Dc sputtering
DUV-lithography
Phase-shifting mask
Simulation
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Summary:The investigation of single layer halftone phase shift mask (SLHTPSM) has been carried by both simulation and chromium fluoride film fabrication. Theoretical analysis provides the optimum SLHTPSM constructions for I-line (365 nm), KrF (248 nm) and ArF (193 nm) microlithographies. A fully characterization of chromium fluoride film processed by de magnetron sputtering shows a feasibility of using this film in the fabricating DUV-PSM.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(96)00933-6