Chemisorption of Ba on deuterium-terminated Si(100) surface

The system of Ba overlayers deposited on a deuterium-terminated Si(100) surface was investigated by means of MDS (metastable de-excitation spectroscopy) and TDS (thermal desorption spectroscopy). Deposition of Ba overlayers caused the reduction of SiD bond strength because of charge donation to Si...

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Bibliographic Details
Published in:Applied surface science 1997-06, Vol.117, p.82-87
Main Authors: Ojima, Kaoru, Hongo, Shozo, Shao, Zhuo-xiong, Urano, Toshio
Format: Article
Language:English
Subjects:
Barium
Deuterium
MDS
TDS
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Summary:The system of Ba overlayers deposited on a deuterium-terminated Si(100) surface was investigated by means of MDS (metastable de-excitation spectroscopy) and TDS (thermal desorption spectroscopy). Deposition of Ba overlayers caused the reduction of SiD bond strength because of charge donation to Si substrate from Ba atoms. As a result, about half of preadsorbed D atoms was released from the sample surface at 1 ML Ba deposition. The other half reacted with adsorbed Ba atoms entirely to form BaD bonds. Therefore, all the SiD bonds were lost, which is quite different from the alkali/D/Si(100) system. More Ba deposition did not induce the desorption of D atoms. The formed BaD bonds are considered to stay between the first and the second layer.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(97)80056-6