Heteroepitaxy of GaN and related materials with a novel two-flow MOVPE horizontal reactor

The behaviour and role of a GaN buffer layer has been investigated in relation with GaN and InGaN heteroepitaxy using a specially designed two-flow horizontal metalorganic vapour phase epitaxy. It is demonstrated that InGaN layers with improved crystal quality can be obtained when a GaN underlying l...

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Bibliographic Details
Published in:Applied surface science 1997-06, Vol.117, p.530-535
Main Authors: Nishida, K., Uchida, K., Kondo, M., Kukimoto, H., Munekata, H.
Format: Article
Language:English
Subjects:
GaN
heterointerface
Metal organic vapor phase epitaxy
Wurtzite
X-ray diffraction
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Summary:The behaviour and role of a GaN buffer layer has been investigated in relation with GaN and InGaN heteroepitaxy using a specially designed two-flow horizontal metalorganic vapour phase epitaxy. It is demonstrated that InGaN layers with improved crystal quality can be obtained when a GaN underlying layer is carefully prepared by a two-step growth process consisting of the growth of a thick GaN intermediate layer ( T s = 950°C) prepared on a thin low-temperature GaN buffer ( T s = 600°C).
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(97)80137-7