Development of single-ion implantation — controllability of implanted ion number

The current status of developing single-ion implantation (SII) which enables us to implant dopant ions one by one into fine semiconductor regions is summarized. Single-ions extracted from a focused ion beam (FIB) have been implanted into a nuclear track detector CR-39 and the average number of impla...

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Bibliographic Details
Published in:Applied surface science 1997-06, Vol.117, p.677-683
Main Authors: Matsukawa, T., Fukai, T., Suzuki, S., Hara, K., Koh, M., Ohdomari, I.
Format: Article
Language:English
Subjects:
CR-39
Doping
FIB
Fluctuation
Single ion implantation
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Summary:The current status of developing single-ion implantation (SII) which enables us to implant dopant ions one by one into fine semiconductor regions is summarized. Single-ions extracted from a focused ion beam (FIB) have been implanted into a nuclear track detector CR-39 and the average number of implanted ions by chopping the ion beam has been evaluated by counting the etch pits on the CR-39 formed by each single-ion incidence. The detection efficiency of the single-ion incidence into a target has also been evaluated by comparing the count of secondary electrons and the implanted ion number, and the controllability of implanted ion number by SII is discussed.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(97)80163-8