Reaction products in light-induced dry etching of GaAs with Cl2 and wavelengths around 120 nm

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Bibliographic Details
Published in:Applied surface science 1998-12, Vol.136 (4), p.331-337
Main Authors: DOBROTVORSKAYA, M. V, STEPANENKO, V, RAAF, H, STRELLER, U, SCHWENTNER, N
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Physics
Surface cleaning, etching, patterning
Surface treatments
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ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(98)00357-2