Electron-difraction investigation of HgCdTe laser deposited films

The investigation of pulsed laser deposited (PLD) HgCdTe films structures by means of electron diffraction and transmission electron microscopy (TEM) techniques was carried out. The deposition was made on GaAs, KCl, CdTe and sapphire substrates with YAG:Nd 3+ (1.06 μm) and XeCl (0.308 μm) lasers. Th...

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Bibliographic Details
Published in:Applied surface science 2000-02, Vol.154, p.206-210
Main Authors: Rudyj, I.O, Kurilo, I.V, Frugynskyi, M.S, Kuźma, M, Zawiślak, J, Virt, I.S
Format: Article
Language:English
Subjects:
Electronography
Hg 1−xCd xTe
Thin films
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Summary:The investigation of pulsed laser deposited (PLD) HgCdTe films structures by means of electron diffraction and transmission electron microscopy (TEM) techniques was carried out. The deposition was made on GaAs, KCl, CdTe and sapphire substrates with YAG:Nd 3+ (1.06 μm) and XeCl (0.308 μm) lasers. The substrate temperature was in the range 30°C–250°C. Both amorphous and polycrystalline films with different crystallite sizes were manufactured on substrates of different quality. The crystallite size versus film production conditions was evaluated from TEM studies.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(99)00403-1