Femtosecond pulse laser processing of TiN on silicon

Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablatio...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2000-02, Vol.154, p.659-663
Main Authors: Bonse, J., Rudolph, P., Krüger, J., Baudach, S., Kautek, W.
Format: Article
Language:English
Subjects:
Femtosecond laser ablation
Optical properties
Silicon
Titanium nitride
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(99)00481-X