Photoelectrochemical characterization of chemically deposited (CdS) X(Bi 2S 3) 1− X composite thin films

(CdS) X (Bi 2S 3) 1− X composite thin films were chemically deposited using simple successive ionic layer adsorption and reaction (SILAR) method onto glass and fluorine doped tin oxide (FTO) coated glass substrates. The films were annealed in air at 200°C for 2 h and used to fabricate photoelectroch...

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Bibliographic Details
Published in:Materials chemistry and physics 2001, Vol.72 (1), p.48-55
Main Authors: Ahire, R.R, Sankapal, B.R, Lokhande, C.D
Format: Article
Language:English
Subjects:
(CdS) X(Bi 2S 3) 1− X composite thin films
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Photoelectrochemical cells
Physics
SILAR
Solid phase epitaxy
growth from solid phases
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Summary:(CdS) X (Bi 2S 3) 1− X composite thin films were chemically deposited using simple successive ionic layer adsorption and reaction (SILAR) method onto glass and fluorine doped tin oxide (FTO) coated glass substrates. The films were annealed in air at 200°C for 2 h and used to fabricate photoelectrochemical cells of configuration: (CdS) X (Bi 2S 3) 1− X /Na 2SSNaOH/C and their properties, such as current–voltage ( I– V), photovoltaic output, spectral response, capacitance–vo1tage (Mott–Schotttty plots), etc. It is found that the (CdS) X (Bi 2S 3) 1− X composite thin films are photoactive. The effect of composition ‘ X’ on these properties was studied.
ISSN:0254-0584
1879-3312
DOI:10.1016/S0254-0584(01)00311-X