Evolution of the diffusion field during crystal growth in gel studied by speckle interferometry

Electronic speckle pattern interferometry has been applied for studies of diffusion fields near a single crystal of potassium dihydrogen phosphate (KDP), growing in tetramethoxysilane (TMS) gel. The experimental procedure together with the advantages of speckle interferometry allowed us to study the...

Full description

Saved in:
Bibliographic Details
Published in:Materials chemistry and physics 2003-04, Vol.80 (1), p.376-382
Main Authors: Krasiński, Mariusz J., Piano, Emanuele, Dall’Aglio, Gian A.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Crystallisation
Exact sciences and technology
Gel growth
Interferometry
Materials science
Materials synthesis
materials processing
Physics
Sol-gel processing, precipitation
Speckles
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electronic speckle pattern interferometry has been applied for studies of diffusion fields near a single crystal of potassium dihydrogen phosphate (KDP), growing in tetramethoxysilane (TMS) gel. The experimental procedure together with the advantages of speckle interferometry allowed us to study the development of diffusion field after a sudden switch of supersaturation. Comparing experimental data with the results of numerical simulation we have evaluated the linear kinetics coefficient B during gel growth. The obtained value was about three times smaller than that in gel free solution what suggests interaction of crystal surface with the gel net.
ISSN:0254-0584
1879-3312
DOI:10.1016/S0254-0584(02)00542-4