Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas

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Bibliographic Details
Published in:Materials chemistry and physics 1998-07, Vol.54 (1-3), p.37-43
Main Authors: FELCH, S. B, LEE, B. S, DARYANANI, S. L, DOWNEY, D. F, MATYI, R. J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0254-0584
1879-3312
DOI:10.1016/S0254-0584(98)00065-0