GaN epilayer on separately deposited buffer layer by hot wall epitaxy

• Published in: Materials chemistry and physics 1998-11, Vol.57 (1), p.67-71
• Main Authors: Lee, Choon-ho, Yang, Dong-ik, Jeon, Gyoung-nam, Kang, Han-sol, Chae, Kil-woo, Do, Ha-yung
• Format: Article
• Language: English
• Subjects: Atomic force microscopy; Buffer layer; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; GaN; Hot wall epitaxy; Iii-v semiconductors; Nitridation; Photoluminescence; Physics
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/S0254-0584(98)00206-5

High quality GaN epilayers were grown on a sapphire substrate using a hot wall epitaxy method. We have investigated the crystal, optical, and electrical properties of GaN epilayers grown as functions of the nitridation condition of the substrate and the growth condition of GaN buffer layer. In order to study an effective method to grow a buffer layer for the growth of high quality GaN epilayer, the buffer layers were formed on the nitridated substrate using two different methods. One is separately deposited buffer layer (SDBL), and the other is co-deposited buffer layer (CDBL). It was observed that the growth condition of the buffer layer had a strong influence on the crystal and optical properties of GaN epilayer. A strong band edge emission peak at 3.474 eV was observed from the photoluminescence spectrum measured at 5 K for GaN epilayer grown at the optimum condition of the buffer layer. The carrier concentration and mobility of undoped GaN epilayer grown with a growth rate of 0.5 μm h −1 were 2 × 10 18 cm −3 and >50 cm 3 V −1 s −1 at room temperature, respectively.