Processing considerations with plasma immersion ion implantation

Plasma immersion ion implantation (PIII) was originally conceived as a method for high-flux implantation and with the capability of conformally implanting non-planar surfaces. Research in the last 15 years has revealed other characteristics which are dissimilar with beamline implantation: multiple s...

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Bibliographic Details
Published in:Surface & coatings technology 2002-07, Vol.156 (1), p.24-30
Main Author: Cheung, Nathan W
Format: Article
Language:English
Subjects:
Exact sciences and technology
Ion-cut
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
Plasma damage
Plasma doping
Plasma implantation
SPIMOX
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Summary:Plasma immersion ion implantation (PIII) was originally conceived as a method for high-flux implantation and with the capability of conformally implanting non-planar surfaces. Research in the last 15 years has revealed other characteristics which are dissimilar with beamline implantation: multiple species implant; energy and angular distribution spread; plasma/surface interaction; substrate self-heating; and dielectric substrate charging. This paper will address the effect of sheath characteristics, conformality of implant, multiple species implant, ion-neutral scattering and bias schemes on designing the processing recipes.
ISSN:0257-8972
1879-3347
DOI:10.1016/S0257-8972(02)00068-3