Ion beam synthesis of boron carbide thin films

We have grown boron carbide (B x C) thin films via direct ion beam deposition using mass selected 11B + and 12C + ions. The films were deposited on silicon and ITO-coated quartz glass substrates with an ion energy of 100 eV at room temperature. The B +:C + ion ratio during deposition was varied betw...

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Bibliographic Details
Published in:Surface & coatings technology 2002-09, Vol.158, p.382-387
Main Authors: Ronning, C, Schwen, D, Eyhusen, S, Vetter, U, Hofsäss, H
Format: Article
Language:English
Subjects:
Boron carbide
Electrical measurements
Film properties
Mass selected ion beam deposition
Optical measurements
X-Ray photoelectron spectroscopy
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Summary:We have grown boron carbide (B x C) thin films via direct ion beam deposition using mass selected 11B + and 12C + ions. The films were deposited on silicon and ITO-coated quartz glass substrates with an ion energy of 100 eV at room temperature. The B +:C + ion ratio during deposition was varied between 0:1 (pure carbon) and 1:0 (pure boron), and the resulting composition of the films matched this ratio, as observed by X-ray photoelectron spectroscopy (XPS). A detailed analysis of the XPS-spectra revealed that the deposited films undergo a transition from sp 3-bonded diamond-like carbon to a boron carbide phase with a lower density with increasing B concentration. The formation of carbide bonds has been observed by means of XPS, and the valence band spectra showed a strong transition from the amorphous semiconductor ta-C to metallic boron. This transition has also been observed by optical and electrical measurements.
ISSN:0257-8972
1879-3347
DOI:10.1016/S0257-8972(02)00248-7