Studies of field emission current from amorphous silicon deposited on a tungsten tip

Field electron emission from an amorphous silicon deposited tungsten tip has been studied. The current–voltage ( I– V) characteristics corresponding to the as-deposited and annealed states of the emitter were recorded. These characteristics showed semiconducting behaviour. Field emission current flu...

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Bibliographic Details
Published in:Ultramicroscopy 1999-09, Vol.79 (1), p.131-134
Main Authors: Sharma, R.B, Pradeep, N, Joag, D.S, Pal, Surendra, Dubey, G.C
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Field emission, ionization, evaporation, and desorption
Physics
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Summary:Field electron emission from an amorphous silicon deposited tungsten tip has been studied. The current–voltage ( I– V) characteristics corresponding to the as-deposited and annealed states of the emitter were recorded. These characteristics showed semiconducting behaviour. Field emission current fluctuations from the two states were recorded. As-deposited tip shows more spikes in low-field region and a mixture of spikes and steps at higher fields. Fast Fourier Transform analysis of the current signal shows Lorentzian-type of power spectrum which is indicative of bistable traps in a-Si : H. Total emission current level remained almost constant for the entire duration of recording.
ISSN:0304-3991
1879-2723
DOI:10.1016/S0304-3991(99)00069-8