Comparative investigations of surface structure, photoluminescence and its excitation in silicon wires

The dependence of the photoluminescence (PL) and PL excitation spectra on the porous silicon top surface structure and the oxide composition on it has been investigated. Researches were carried out using the following methods: PL, PL excitation, electron paramagnetic resonance, atomic force microsco...

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Bibliographic Details
Published in:Journal of electron spectroscopy and related phenomena 2001-03, Vol.114, p.235-241
Main Authors: Polupan, G.P., Torchynska, T.V., Palacios Gomez, J., Flores Gonzalez, H.A., Bacarril Espinoza, F.G., Ita Torre, A., Bulakh, B.M., Scherbina, L.V.
Format: Article
Language:English
Subjects:
AFM
Luminescence excitation
Photoluminescence
Porous silicon
XPS
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Summary:The dependence of the photoluminescence (PL) and PL excitation spectra on the porous silicon top surface structure and the oxide composition on it has been investigated. Researches were carried out using the following methods: PL, PL excitation, electron paramagnetic resonance, atomic force microscope and X-ray photoelectron emission spectroscopy. Results indicate a direct correlation between the suboxide content and roughness structure on the surface with PL intensity. No correlation was noted between the PL intensity and the concentration of Si dangling bonds (non-radiative recombination centers). These results have given further support to a suboxide-related color center on the Si/SiO x interface as the source of the intense red luminescence of silicon wires.
ISSN:0368-2048
1873-2526
DOI:10.1016/S0368-2048(00)00379-0