Ion implantation into gallium nitride

• Published in: Physics reports 2001-09, Vol.351 (5), p.349-385
• Main Authors: Ronning, C, Carlson, E.P, Davis, R.F
• Format: Article
• Language: English
• Subjects: Dopants; Gallium nitride; Ion implantation; Optical properties; Structural properties
• ISSN: 0370-1573; 1873-6270
• DOI: 10.1016/S0370-1573(00)00142-3

This comprehensive review is concerned with studies regarding ion implanted gallium nitride (GaN) and focuses on the improvements made in recent years. It is divided into three sections: (i) structural properties, (ii) optical properties and (iii) electrical properties. The first section includes X-ray diffraction (XRD), transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS), Rutherford Backscattering (RBS), emission channeling (EC) and perturbed γγ-angular correlation (PAC) measurements on GaN implanted with different ions and doses at different temperatures as a function of annealing temperature. The structural changes upon implantation and the respective recovery upon annealing will be discussed. Several standard and new annealing procedures will be presented and discussed. The second section describes mainly photoluminescence (PL) studies, however, the results will be discussed with respect to Raman and ellipsometry studies performed by other groups. We will show that the PL-signal is very sensitive to the processes occurring during implantation and annealing. The results of Hall and C– V measurements on implanted GaN are presented in Section 3. We show and discuss the difficulties in achieving electrical activation. However, optical and electrical properties are both a result of the structural changes upon implantation and annealing. Each section will be critically discussed with respect to the existing literature, and the main conclusions are drawn from the interplay of the results obtained from the different techniques used/reviewed.