Thermoluminescent study of porous silicon

Thermally stimulated luminescence (TSL) has been studied in highly porous silicon (por-Si) characterized by a non-monotonous dependence of the temperature quenching of the main orange–red photoluminescent (PL) band. It was shown that the TSL glow curve consists of a narrow low-temperature peak ( T m...

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Bibliographic Details
Published in:Physics letters. A 2001-02, Vol.279 (5), p.391-394
Main Authors: Blonskyy, I.V., Brodyn, M.S., Vakhnin, A.Yu, Kadan, V.M., Kadashchuk, A.K.
Format: Article
Language:English
Subjects:
Charge-carrier traps
Photoluminescence
Porous silicon
Thermoluminescence
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Summary:Thermally stimulated luminescence (TSL) has been studied in highly porous silicon (por-Si) characterized by a non-monotonous dependence of the temperature quenching of the main orange–red photoluminescent (PL) band. It was shown that the TSL glow curve consists of a narrow low-temperature peak ( T max≈20 K) and a broad high-temperature component centered at 80 K. Unambiguous relation between the low-temperature TSL component and the emission band centered at λ max≈440 nm on the one hand, and the high-temperature TSL component and the orange–red emission band on the other hand, is established. Arguments linking the trap nature with defect states in SiO 2 enveloping silicon nanowires are given.
ISSN:0375-9601
1873-2429
DOI:10.1016/S0375-9601(01)00008-1