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On the density-of-states function in heavily doped compound semiconductors
We study the energy spectrum of the conduction electrons and the corresponding density-of-states (DOS) in heavily doped compound semiconductors forming band-tails. It is found, taking Hg 1− x Cd x Te as an example, that the complex nature of the energy spectrum, the oscillatory DOS for negative valu...
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Published in: | Physics letters. A 2001-10, Vol.288 (5), p.335-339 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We study the energy spectrum of the conduction electrons and the corresponding density-of-states (DOS) in heavily doped compound semiconductors forming band-tails. It is found, taking Hg
1−
x
Cd
x
Te as an example, that the complex nature of the energy spectrum, the oscillatory DOS for negative values of the energy and the formation of a new forbidden zone is due to interaction of the impurity atoms in the tail with the spin–orbit splitting constant of the valence band. No oscillations in the DOS are found for heavily doped two-band Kane type and parabolic energy bands, respectively. The well-known results have also been obtained from our generalized derivation under certain limiting conditions. |
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ISSN: | 0375-9601 1873-2429 |
DOI: | 10.1016/S0375-9601(01)00513-8 |